型号:

AON6426

RoHS:无铅 / 符合
制造商:Alpha & Omega Semiconductor Inc描述:MOSFET N CH 30V 65A DFN5X6
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
AON6426 PDF
标准包装 1
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 65A
开态Rds(最大)@ Id, Vgs @ 25° C 5.5 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 250µA
闸电荷(Qg) @ Vgs 45nC @ 10V
输入电容 (Ciss) @ Vds 2300pF @ 15V
功率 - 最大 2W
安装类型 表面贴装
封装/外壳 8-VDFN 裸露焊盘
供应商设备封装 8-DFN-EP(5x6)
包装 剪切带 (CT)
其它名称 785-1345-1
相关参数
APT2012SF4C-PRV Kingbright Corp LED IR 880NM SFR 2.0X1.2MM SMD
P51-750-S-N-M12-20MA SSI Technologies Inc SENSOR 750PSIS 1.2 UNF 4-20 MA
AON6426 Alpha & Omega Semiconductor Inc MOSFET N CH 30V 65A DFN5X6
AP1608SF4C Kingbright Corp LED IR SMD 120 DEGREE 0.4LM
P51-500-S-N-M12-20MA SSI Technologies Inc SENSOR 500PSIS 1.2 UNF 4-20 MA
AOT416 Alpha & Omega Semiconductor Inc MOSFET N-CH 100V 42A TO-220
BSC050N03MS G Infineon Technologies MOSFET N-CH 30V 80A TDSON-8
P51-300-S-N-M12-20MA SSI Technologies Inc SENSOR 300PSIS 1.2 UNF 4-20 MA
AP2012SF4C Kingbright Corp LED IR CLEAR GAALAS SMT
P51-200-S-N-M12-20MA SSI Technologies Inc SENSOR 200PSIS 1.2 UNF 4-20 MA
BSC050N03MS G Infineon Technologies MOSFET N-CH 30V 80A TDSON-8
P51-100-S-N-M12-20MA SSI Technologies Inc SENSOR 100PSIS 1.2 UNF 4-20 MA
WP710A10SF4C Kingbright Corp LED 3MM IR SF4 880NM WATER CLR
ASE2-33.000MHZ-ET Abracon Corporation OSC 33.000 MHZ 2.5V SMT
P51-75-S-N-M12-20MA SSI Technologies Inc SENSOR 75PSIS 1.2 UNF 4-20 MA
ASE2-33.000MHZ-ET Abracon Corporation OSC 33.000 MHZ 2.5V SMT
QED123A4R0 Fairchild Optoelectronics Group LED IR ALGAAS 880NM PEACH 5MM
P51-50-S-N-M12-20MA SSI Technologies Inc SENSOR 50PSIS 1.2 UNF 4-20 MA
ASE-33.000MHZ-ET Abracon Corporation OSC 33.000 MHZ 3.3V SMT
APT1608SF4C-PRV Kingbright Corp LED IR 880NM SF4 1.6X0.8MM SMD